Preparation and characterization of radio-frequency-sputtered Ba sub 2 Si sub 2 TiO sub 8 thin films

Title films were grown on crystalline Si(100) substrates and characterized using wavelength-dispersive spectrometry, XRD, optical microscopy, SEM, and diagonal techniques for dielectric properties. Chemical compositions of the films increasingly deviated from stoichiometry with film thickness. Hf im...

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Bibliographic Details
Published in:Journal of materials science 1993-01, Vol.28 (15), p.4104-4112
Main Authors: Li, Yi, Kawa, P M, Youdelis, W V, Chao, B S, Yamauchi, H
Format: Article
Language:English
Online Access:Get full text
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Summary:Title films were grown on crystalline Si(100) substrates and characterized using wavelength-dispersive spectrometry, XRD, optical microscopy, SEM, and diagonal techniques for dielectric properties. Chemical compositions of the films increasingly deviated from stoichiometry with film thickness. Hf impedance character was typical of piezoelectric materials, giving a min. impedance frequency of 9 MHz and a serial resonant frequency at approximately 9.5 MHz. 43 refs.
ISSN:0022-2461