Properties of a new U.V.-sensitive CCD detector array

Theoretical considerations and experimental results are presented characterizing a new one-dimensional array of U.V.-sensitive silicon photodetectors (200–1100 nm) with CCD read-out. Due to a special design, the sensitive elements deliver very small dark-currents and have internal quantum efficienci...

Full description

Saved in:
Bibliographic Details
Published in:Solid-state electronics 1993, Vol.36 (1), p.69-74
Main Authors: Kothe, J., von Münch, W.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Miscellaneous
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Theoretical considerations and experimental results are presented characterizing a new one-dimensional array of U.V.-sensitive silicon photodetectors (200–1100 nm) with CCD read-out. Due to a special design, the sensitive elements deliver very small dark-currents and have internal quantum efficiencies better than 90%.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(93)90070-7