Reduction of leakage current and minority carrier lifetime in platinum-diffused pn diodes

We propose a novel method to control the depth profiles of platinum-related trap concentration in platinum-diffused silicon p + n diodes and to improve their electrical properties, leakage current and lifetime. Platinum has been introduced into silicon wafers and p + n diodes by one- or two-step hea...

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Bibliographic Details
Published in:JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP 1993-09, Vol.32 (9A), p.3760-3763
Main Authors: SAGALA, P, KUWANO, H
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:We propose a novel method to control the depth profiles of platinum-related trap concentration in platinum-diffused silicon p + n diodes and to improve their electrical properties, leakage current and lifetime. Platinum has been introduced into silicon wafers and p + n diodes by one- or two-step heat treatment. The experimental results show that we can simultaneously minimize the leakage current and minority carrier lifetime, especially by the two-step heat treatment. This is the first proposal to overcome the trade-off relationship between the leakage current and lifetime. The experiment also proves that the dominant level for both the leakage current and minority carrier lifetime is a level at Ec-0.52 eV.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.3760