Reduction of leakage current and minority carrier lifetime in platinum-diffused pn diodes

We propose a novel method to control the depth profiles of platinum-related trap concentration in platinum-diffused silicon p + n diodes and to improve their electrical properties, leakage current and lifetime. Platinum has been introduced into silicon wafers and p + n diodes by one- or two-step hea...

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Published in:JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP 1993-09, Vol.32 (9A), p.3760-3763
Main Authors: SAGALA, P, KUWANO, H
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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cited_by cdi_FETCH-LOGICAL-c388t-23caeccaadbcf177adcdba620bd5bef019f7ff1db5ab4d515ba45bdf41b76973
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description We propose a novel method to control the depth profiles of platinum-related trap concentration in platinum-diffused silicon p + n diodes and to improve their electrical properties, leakage current and lifetime. Platinum has been introduced into silicon wafers and p + n diodes by one- or two-step heat treatment. The experimental results show that we can simultaneously minimize the leakage current and minority carrier lifetime, especially by the two-step heat treatment. This is the first proposal to overcome the trade-off relationship between the leakage current and lifetime. The experiment also proves that the dominant level for both the leakage current and minority carrier lifetime is a level at Ec-0.52 eV.
doi_str_mv 10.1143/jjap.32.3760
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ispartof JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP, 1993-09, Vol.32 (9A), p.3760-3763
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source IOPscience journals; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Reduction of leakage current and minority carrier lifetime in platinum-diffused pn diodes
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