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Stress effect on the resonance properties of single-crystal diamond cantilever resonators for microscopy applications

•High quality diamond-on-diamond cantilevers are fabricated by smart-cut method.•Stress in cantilevers is analyzed by curvature, Raman shift and resonance frequency.•Resonance frequencies are little influenced despite the residual stress.•Single crystal diamond cantilevers are ideal system for micro...

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Bibliographic Details
Published in:Ultramicroscopy 2022-04, Vol.234, p.113464-113464, Article 113464
Main Authors: Shen, Xiulin, Lv, Zhenfei, Ichikawa, Kimiyoshi, Sun, Huanying, Sang, Liwen, Huang, Zhaohui, Koide, Yasuo, Koizumi, Satoshi, Liao, Meiyong
Format: Article
Language:English
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Summary:•High quality diamond-on-diamond cantilevers are fabricated by smart-cut method.•Stress in cantilevers is analyzed by curvature, Raman shift and resonance frequency.•Resonance frequencies are little influenced despite the residual stress.•Single crystal diamond cantilevers are ideal system for microscopic application. Micro-cantilever beams have been widely used for surface sensing applications as well as atomic force microscope. However, surface stress appears in cantilever beams due to a variety of factors such as the absorption of molecules, temperature variations, materials imperfectness, and the fabrication process. Single-crystal diamond (SCD) has been regarded as an ideal material for cantilever sensors through the surface effect due to the outstanding mechanical rigidity and chemical inertness. In this paper, the authors report on the SCD cantilever beams fabricated by a smart-cut method with high quality factors up to 14 000 and stress characterization by surface geometry curvature observation and Raman microscopy. Although both surface geometry profile and Raman shift show the existence of surface stress in the SCD cantilever beams, the resonance properties are little influenced and maintain excellent rigidity and high quality. Therefore, the SCD-on-SCD resonator provides a promising platform for high-reliability microscopy applications.
ISSN:0304-3991
1879-2723
DOI:10.1016/j.ultramic.2022.113464