Surface mobility of C60 on SiO2

The interaction of a collisionless beam of thermal C60 nanoclusters with a silicon dioxide surface has been investigated with modulated molecular beam-mass spectroscopic techniques. Analysis of the amplitude and phase lag of the desorbed C60 shows the interaction mechanism to involve the elementary...

Full description

Saved in:
Bibliographic Details
Published in:The Journal of chemical physics 1993-09, Vol.99 (6), p.4855-4859
Main Authors: MOALEM, M, BALOOCH, M, HAMZA, A. V, SIEKHAUS, W. J, OLANDER, D. R
Format: Article
Language:English
Subjects:
Atomic and molecular clusters
Atomic and molecular physics
Exact sciences and technology
Physics
Studies of special atoms, molecules and their ions
clusters
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The interaction of a collisionless beam of thermal C60 nanoclusters with a silicon dioxide surface has been investigated with modulated molecular beam-mass spectroscopic techniques. Analysis of the amplitude and phase lag of the desorbed C60 shows the interaction mechanism to involve the elementary steps of sticking, desorption, and long-range surface diffusion. Surface diffusion coefficients determined in this measurement indicate that surface C60 nanoclusters approach two-dimensional gas-like behavior. The sticking probability of C60 clusters on SiO2 is determined to be unity. The best fit desorption rate constant kd for C60 from SiO2 is 5×1010 exp(−23 kcal/mol/RT) in agreement with previous temperature programmed desorption experiments. The efficiencies of electron impact ionization of C60 to C60+ and C60++ is measured for electron energies from 10 to 105 eV for neutrals at 875 K.
ISSN:0021-9606
1089-7690
DOI:10.1063/1.466032