Study of broad band photoluminescence from Si sub(1-x)Ge sub(x)/Si superlattices

Using photoluminescence (PL) obtained with ultraviolet (UV) laser excitation, we have examined Si sub(1-x)Ge sub(x)/Si long-period superlattices (SLs) grown by molecular beam epitaxy at 500 degree C and annealed post-growth at 550 to 750 degree C. Our as-grown samples show broad PL bands, 120 meV be...

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Bibliographic Details
Published in:Journal of crystal growth 1993-01, Vol.127 (1-4), p.472-475
Main Authors: Steiner, T D, Hengehold, R L, Yeo, Y K, Godbey, D J, Thompson, P E, Pomrenke, Gernot S
Format: Article
Language:English
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Summary:Using photoluminescence (PL) obtained with ultraviolet (UV) laser excitation, we have examined Si sub(1-x)Ge sub(x)/Si long-period superlattices (SLs) grown by molecular beam epitaxy at 500 degree C and annealed post-growth at 550 to 750 degree C. Our as-grown samples show broad PL bands, 120 meV below the band gap when the effects of quantum confinement of holes are added in. The broad PL band peak positions shift to higher energies as the anneal temperature increases. This coincides with a reduction in the activation energies of the broad PL bands. The broad bands from both the as-grown and annealed samples shift to lower energies as the sample temperature increases.
ISSN:0022-0248