Strain effects in the intersubband transitions of narrow InGaAs quantum wells

Internal uniaxial stress effects on the degenerate P-like C2 subband Bloch states of Si-doped (001) InGaAs single quantum wells (SQWs) have been studied using polarization-resolved infrared spectroscopy. It is found that a tetragonal strain perturbation of the crystal potential produces a splitting...

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Bibliographic Details
Published in:Applied physics letters 1993-05, Vol.62 (19), p.2413-2415
Main Authors: PENG, L. H, SMET, J. H, BROEKAERT, T. P. E, FONSTAD, C. G
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:Internal uniaxial stress effects on the degenerate P-like C2 subband Bloch states of Si-doped (001) InGaAs single quantum wells (SQWs) have been studied using polarization-resolved infrared spectroscopy. It is found that a tetragonal strain perturbation of the crystal potential produces a splitting between the TM and TE active intersubband transitions. The magnitude of the linear strain intersubband deformation potential of InGaAs quantum wells is 3 eV.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109382