Stress evolution due to electromigration in confined metal lines

Electromigration is an important concern in very large scale integrated circuits. In narrow, confined metal interconnects used at the chip level, the electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Solutions for the differential equation governing the...

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Published in:Journal of applied physics 1993-04, Vol.73 (8), p.3790-3799
Main Authors: KORHONEN, M. A, BØRGESEN, P, TU, K. N, CHE-YU LI
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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description Electromigration is an important concern in very large scale integrated circuits. In narrow, confined metal interconnects used at the chip level, the electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Solutions for the differential equation governing the evolution of back stresses are presented for several representative cases, and the solutions are discussed in the light of experimental as well as theoretical developments from the literature.
doi_str_mv 10.1063/1.354073
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source AIP Digital Archive
subjects Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Stress evolution due to electromigration in confined metal lines
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