Reliability of InGaAs/InP based separate absorption grading multiplication avalanche photodiodes

An overview over typical defects and reliability aspects regarding the operation of InGaAs/InP avalanche photodiodes for the use in fiber-optic communication systems is given. Specifically, measurements regarding the performance and stability of different types of top illuminated InGaAs/InP Separate...

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Bibliographic Details
Published in:Microelectronics and reliability 1996, Vol.36 (7-8), p.973-1000
Main Authors: Montangero, P, Azzini, G A, Neitzert, H C, Ricci, G, Serra, L
Format: Article
Language:English
Online Access:Get full text
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Summary:An overview over typical defects and reliability aspects regarding the operation of InGaAs/InP avalanche photodiodes for the use in fiber-optic communication systems is given. Specifically, measurements regarding the performance and stability of different types of top illuminated InGaAs/InP Separate Absorption Grading Multiplication avalanche photodiodes are compared with special emphasis on the homogeneity of the photoresponse. High resolution scanning optical microscopy measurements at different wavelengths allow to identify specific technological problems. Guard ring misalignment resulting in increased responsivity of the junction perimeter are found.
ISSN:0026-2714
DOI:10.1016/0026-2714(96)00026-1