Sodium Incorporation for Enhanced Performance of Two-Dimensional Sn-Based Perovskite Transistors

Two-dimensional metal halide perovskites (2D MHPs) are promising candidates for transistor channel materials because of their high mobility in the lateral direction; however, Sn-based 2D MHPs exhibit poor film quality and oxidation stability. Here, we report a simple method to improve the performanc...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2022-02, Vol.14 (7), p.9363-9367
Main Authors: Go, Ji-Young, Zhu, Huihui, Reo, Youjin, Kim, Hyunjun, Liu, Ao, Noh, Yong-Young
Format: Article
Language:English
Subjects:
Organic Electronic Devices
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Summary:Two-dimensional metal halide perovskites (2D MHPs) are promising candidates for transistor channel materials because of their high mobility in the lateral direction; however, Sn-based 2D MHPs exhibit poor film quality and oxidation stability. Here, we report a simple method to improve the performance and stability of 2D MHP transistors by incorporating sodium iodide (NaI) additives. By adding 1 vol % NaI (Na1), the transistors with phenethylammonium tin iodide (PEA2SnI4) exhibited reduced dual-sweep hysteresis, robust bias stability, and larger hole mobility (2.13 cm2 V–1 s–1) than that of a pristine device (0.39 cm2 V–1 s–1). Improvements in the film quality, such as increased grain size, crystallinity, and better film coverage, were observed in the PEA2SnI4:NaI film. In addition, NaI effectively passivated the iodine vacancies at the grain boundaries, thereby suppressing the defects.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.1c19368