Sub-quarter-micron dual gate CMOSFETs with ultra-thin gate oxide of 2nm

The high performance 0.25 mu m dual gate CMOS with ultrathin gate oxide of 2 nm is demonstrated for low-voltage logic application. The boron penetration can effectively be suppressed by the nitrogen implantation technique, even if the gate oxide film is reduced to 2 nm. Moreover the inverter delay w...

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Bibliographic Details
Main Authors: Kuroi, T, Shimizu, S, Ogino, S, Teramoto, A, Shirahata, M, Okumura, Y, Inuishi, M, Miyoshi, H
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:The high performance 0.25 mu m dual gate CMOS with ultrathin gate oxide of 2 nm is demonstrated for low-voltage logic application. The boron penetration can effectively be suppressed by the nitrogen implantation technique, even if the gate oxide film is reduced to 2 nm. Moreover the inverter delay with the Al interconnect load can be remarkably improved by the highly drivable MOSFETs with thin gate oxide for low-voltage operation. Furthermore the hot carrier degradation of NMOSFETs can be suppressed as reducing the oxide thickness. However it is found that the hot-carrier degradation of PMOSFETs is enhanced in thin-oxide region under channel hot-hole injection.
ISSN:0743-1562