The s, p- d exchange interaction in GaAs heavily doped with Mn

The exciton splitting induced by the s, p- d exchange interaction in Ga 1− x Mn x As ( x < 0.001) was studied by polarized magnetoreflectance. Data were taken at 2 K in magnetic fields up to 5T. Combining these results with magnetization data, a value ( N 0 α − N 0 β) = − (2.3 ± 0.6) eV was obtai...

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Bibliographic Details
Published in:Solid state communications 1996, Vol.99 (12), p.927-931
Main Authors: Szczytko, J., Mac, W., Stachow, A., Twardowski, A., Becla, P., Tworzydklo, J.
Format: Article
Language:English
Subjects:
A. semiconductors
C. impurities in semiconductors
Condensed matter: electronic structure, electrical, magnetic, and optical properties
D. exchange and superexchange
E. light absorption and reflection
Electron states
Exact sciences and technology
Exchange interactions
Level splitting and interactions
Magnetooptical effects
optical properties
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
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Summary:The exciton splitting induced by the s, p- d exchange interaction in Ga 1− x Mn x As ( x < 0.001) was studied by polarized magnetoreflectance. Data were taken at 2 K in magnetic fields up to 5T. Combining these results with magnetization data, a value ( N 0 α − N 0 β) = − (2.3 ± 0.6) eV was obtained for the difference between the s- d and p- d exchange constants. Assuming that N 0 α ≈ +0.2 eV, the p- d exchange is ferromagnetic, with a magnitude N 0 β ≈ +2.5 eV. Copyright
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(96)00315-8