Evidence of interference between electron-phonon and electron-impurity scattering on the conductivity of thin metal films

The temperature dependence of the resistivity rho of thin gold films (thickness d=100-400 A) was measured at T=30 mK-300K. In a wide temperature range below Theta /15 ( Theta is the Debye temperature), Delta rho (T)/ rho was found to be proportional to T exp 2 and it did not depend on the mean free...

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Bibliographic Details
Published in:Physical review. B, Condensed matter Condensed matter, 1993-05, Vol.47 (20), p.13659-13663
Main Authors: ECHTERNACH, P. M, GERSHENSON, M. E, BOZLER, H. M
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Metals. Metallurgy
Physics
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Summary:The temperature dependence of the resistivity rho of thin gold films (thickness d=100-400 A) was measured at T=30 mK-300K. In a wide temperature range below Theta /15 ( Theta is the Debye temperature), Delta rho (T)/ rho was found to be proportional to T exp 2 and it did not depend on the mean free path of electrons. Experimental determinations of the dependences Delta rho (T)/ rho in the temperature range concerned were in good agreement with the correction to the impurity resistivity of a normal metal due to the quantum interference between the electron-phonon and electron-impurity interactions.
ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.47.13659