Direct current reactive magnetron sputtered zinc oxide thin films —the effect of the sputtering pressure

• Published in: Thin solid films 1994-10, Vol.250 (1), p.26-32
• Main Authors: Meng, Li-Jian, dos Santos, M.P.
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(94)90159-7

ZnO thin films were deposited onto glass substrates by d.c. reactive magnetron sputtering from a metallic zinc target. A systematic study has been made on the influence of sputtering pressure in the range from 0.2 Pa to 3 Pa on the film structural and optical properties. At low sputtering pressure (0.2–0.4 Pa), the film was inhomogeneous, non-stoichiometric and had low refractive index and an almost amorphous structure. At high sputtering pressure (0.6–0.8 Pa), the film was homogeneous, stoichiometric and had high refractive index and the crystallinity was improved. As the sputtering pressure was further increased (1–3 Pa), the homogeneity and the refractive index of the film had no clear variation, but the crystallinity of the film went down. As the sputtering pressure was increased from 0.2 Pa to 3 Pa, the transmittance of the film increased and the deposition rate of the film decreased.