Filament Engineering of Two‐Dimensional h‐BN for a Self‐Power Mechano‐Nociceptor System

The switching variability caused by intrinsic stochasticity of the ionic/atomic motions during the conductive filaments (CFs) formation process largely limits the applications of diffusive memristors (DMs), including artificial neurons, neuromorphic computing and artificial sensory systems. In this...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2022-04, Vol.18 (16), p.e2200185-n/a
Main Authors: Ding, Guanglong, Chen, Ruo‐Si, Xie, Peng, Yang, Baidong, Shang, Gang, Liu, Yang, Gao, Lili, Mo, Wen‐Ai, Zhou, Kui, Han, Su‐Ting, Zhou, Ye
Format: Article
Language:English
Subjects:
Biological properties
Crystallization
Cytoskeleton
device uniformity
diffusive memristors
Electric Conductivity
Filaments
Humans
Interlayers
Memristors
Nanogenerators
Nanotechnology
Neurons
Nociceptors
Pattern recognition
reservoir computing
self‐power mechano‐nociceptor nociceptors
triboelectric nanogenerators
two‐dimensional h‐BN
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Summary:The switching variability caused by intrinsic stochasticity of the ionic/atomic motions during the conductive filaments (CFs) formation process largely limits the applications of diffusive memristors (DMs), including artificial neurons, neuromorphic computing and artificial sensory systems. In this study, a DM device with improved device uniformity based on well‐crystallized two‐dimensional (2D) h‐BN, which can restrict the CFs formation from three to two dimensions due to the high migration barrier of Ag+ between h‐BN interlayer, is developed. The BN‐DM has potential arrayable feature with high device yield of 88%, which can be applied for building a reservoir computing system for digital pattern recognition with high accuracy rate of 96%, and used as an artificial nociceptor to sense the external noxious stimuli and mimic the important biological nociceptor properties. By connecting the BN‐DM to a self‐made triboelectric nanogenerator (TENG), a self‐power mechano‐nociceptor system, which can successfully mimic the important nociceptor features of “threshold”, “relaxation” and “allodynia” is designed. The Ag conductive filaments formation can be restricted from three to two dimensions by 2D h‐BN, which can improve the device spatial uniformity significantly. Based on this h‐BN based diffusive memristor, a reservoir computing system for digital pattern recognition and a self‐powered mechano‐nociceptor system for mimicking the important nociceptor features can be successfully built.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.202200185