Development of crystallinity and morphology in hafnium dioxide thin films grown by atomic layer epitaxy

The structural development of HfO 2 thin films grown from HfCl 4 and water onto glass substrates by atomic layer epitaxy at 500 °C was studied with X-ray diffraction, atomic force microscopy and scanning electron microscopy. The films were found to contain two regions of different crystallinity: a t...

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Bibliographic Details
Published in:Thin solid films 1994-10, Vol.250 (1), p.72-80
Main Authors: Ritala, Mikko, Leskelä, Markku, Niinistö, Lauri, Prohaska, Thomas, Friedbacher, Gernot, Grasserbauer, Manfred
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:The structural development of HfO 2 thin films grown from HfCl 4 and water onto glass substrates by atomic layer epitaxy at 500 °C was studied with X-ray diffraction, atomic force microscopy and scanning electron microscopy. The films were found to contain two regions of different crystallinity: a thin amorphous starting layer and a subsequent preferentially oriented polycrystalline layer. The films were built up of densely packed grains. Substantial surface roughening occurred along with increasing film thickness. The films were chlorine free as analyzed by Rutherford backscattering spectrometry.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(94)90168-6