Effect of Ga1−xInxAs1−yPy Al-free asymmetric barrier on GaAs-based 808-nm laser diode

A GaInAsP/GaAs/GaAsP Al-free laser with asymmetric potential barriers is designed theoretically to prevent carrier leakage. The band alignment demonstrates that a high height of the potential barrier decreases the leakage current. The internal quantum efficiency increases by increasing the injection...

Full description

Saved in:
Bibliographic Details
Published in:Optics letters 2022-03, Vol.47 (5), p.1153-1156
Main Authors: Xu, Zhang, Dong, Hailiang, Gang, Jia Zhi, Qin, Zhang Ai, Jian, Liang, Yong, Wang Zhi, She, Xu Bing
Format: Article
Language:English
Subjects:
Asymmetry
Carrier transport
Efficiency
Energy conversion efficiency
Gallium indium arsenide phosphide
Injection current
Lasers
Leakage current
Potential barriers
Quantum efficiency
Semiconductor lasers
Threshold currents
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A GaInAsP/GaAs/GaAsP Al-free laser with asymmetric potential barriers is designed theoretically to prevent carrier leakage. The band alignment demonstrates that a high height of the potential barrier decreases the leakage current. The internal quantum efficiency increases by increasing the injection efficiency, which is attributed to the decreasing electron potential barrier heights. Moreover, the threshold current and operating voltage decrease by adopting a novel barrier so that the output power and power conversion efficiency (PCE) increase. When the injection current is 5 kA/cm2, the PCE is 77.82% and the output power is 13.21 W. The physical mechanism of potential barrier heights affecting carrier transport is investigated, which will provide a theoretical basis for optimizing laser diodes.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.451551