Generation of electrochemically deposited metal patterns by means of electron beam (nano)lithography of self-assembled monolayer resists

Submicron metal patterns have been produced by galvanic deposition in openings in a monolayer resist generated by electron beam (e-beam) lithography. The monolayer resist is a self-assembled docosanethiol (C22H45SH) layer adsorbed on gold. Proper removal of the thiol requires an e-beam dose of 10–10...

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Bibliographic Details
Published in:Applied physics letters 1994-01, Vol.64 (3), p.285-287
Main Authors: Sondag-Huethorst, J. A. M., van Helleputte, H. R. J., Fokkink, L. G. J.
Format: Article
Language:English
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Summary:Submicron metal patterns have been produced by galvanic deposition in openings in a monolayer resist generated by electron beam (e-beam) lithography. The monolayer resist is a self-assembled docosanethiol (C22H45SH) layer adsorbed on gold. Proper removal of the thiol requires an e-beam dose of 10–100 mC cm−2. The positive resist pattern was used to selectively deposit galvanic copper. The size of the Cu patterns is affected by the galvanic deposition time and the CuSO4 concentration in the electrolyte solution. The smallest Cu patterns produced were about 75 nm in width.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111182