Synthesis and microstructure of c-axis oriented Bi4Ti3O12 thin films using sol-gel process on silicon

• Published in: Journal of materials science letters 1996, Vol.15 (1), p.53-54
• Main Authors: Gu, Hao-Shuang, Sun, Wen-Hua, Wang, Shi-Min, Zhou, Tou-Shen, Kuang, An-Xiang, Liu, Jian-She, Li, Xing-Jiao
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0261-8028; 1573-4811
• DOI: 10.1007/BF01855611

c-axis oriented bismuth titanate thin films were grown on Si(111) substrates using a sol-gel process with bismuth nitrate and titanium butoxide starting materials. The surface of the film was smooth and free from cracks. The grain size was evenly distributed around 0.15 micron and a single-layered film had a thickness of approximately 0.1 micron. Fully crystallised thicker films were fabricated using a multilayer spinning technique and heat treatment up to 650 C in oxygen. The dielectric constant and loss factor for a 1.2 micron thickness film at a frequency of 100 kHz were 160 and 0.03 respectively. 6 refs.