The complexing of oxygen with the Group II impurities Be, Cd and Zn in silicon

The results of a photoluminescence study of the Group II elements Be, Cd and Zn in silicon show that oxygen-rich samples contain defects not observed in oxygen-lean material. Uniaxial stress and Zeeman measurements show that all the defect spectra are similar and pseudo-donor in nature. The defects...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1996-01, Vol.36 (1-3), p.116-119
Main Authors: Daly, S.E., McGlynn, E., Henry, M.O., Campion, J.D., McGuigan, K.G., do Carmo, M.C., Nazaré, M.H.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Elemental semiconductors
Exact sciences and technology
Group II elements
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Oxygen
Photoluminescence
Physics
Silicon
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Summary:The results of a photoluminescence study of the Group II elements Be, Cd and Zn in silicon show that oxygen-rich samples contain defects not observed in oxygen-lean material. Uniaxial stress and Zeeman measurements show that all the defect spectra are similar and pseudo-donor in nature. The defects are attributed to complexes of oxygen and the Group II impurity.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(95)01290-7