Magnetoelectric coupling effects on the band alignments of multiferroic In2Se3–CrI3 trilayer heterostructures

Due to unique magnetoelectric coupling effects, two-dimensional (2D) multiferroic van der Waals heterostructures (vdWHs) are promising for next-generation information processing and storage devices. Here, we design theoretically multiferroic In2Se3/CrI3 trilayer vdWHs with different stacking pattern...

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Bibliographic Details
Published in:Nanoscale 2022-04, Vol.14 (14), p.5454-5461
Main Authors: Liu, Xueying, Shen, Chenhai, Li, Xueping, Wang, Tianxing, He, Mengjie, Li, Lin, Wang, Ying, Li, Jingbo, Xia, Congxin
Format: Article
Language:English
Subjects:
Coupling
Data processing
Electrons
Ferroelectric materials
Ferroelectricity
Heterostructures
Multiferroic materials
Polarization
Stacking
Transistors
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Summary:Due to unique magnetoelectric coupling effects, two-dimensional (2D) multiferroic van der Waals heterostructures (vdWHs) are promising for next-generation information processing and storage devices. Here, we design theoretically multiferroic In2Se3/CrI3 trilayer vdWHs with different stacking patterns. For the CrI3/In2Se3/CrI3 trilayer vdWHs, whether ferroelectric upward or downward polarization, type-I and type-II band alignments are formed for spin-up and spin-down channels. However, for the CrI3/In2Se3/In2Se3 trilayer vdWHs, downward polarization induces the type-III band alignment, which is typical for spin-tunnel transistors. Moreover, nonvolatile ferroelectric polarization and stacking patterns can induce the conversion between a unipolar semiconductor and a bipolar (unipolar) half-metal. These results provide a possible route to realize nanoscale multifunctional spintronic devices based on 2D multiferroic systems.
ISSN:2040-3364
2040-3372
DOI:10.1039/d1nr06383a