Electronic passivation of silicon surfaces by halogens

The electronic passivation of Si surface by iodine termination is reported. The resulting surface recombination velocity on Si(100) is less than 1 cm/s, which is better than that obtained in concentrated HF. A surface recombination velocity of 20 cm/s using bromine is achieved. A simple model for th...

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Bibliographic Details
Published in:Journal of electronic materials 1994-05, Vol.23 (5), p.487-491
Main Authors: M'SAAD, H, MICHEL, J, LAPPE, J. J, KIMERLING, L. C
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
Surface states, band structure, electron density of states
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Summary:The electronic passivation of Si surface by iodine termination is reported. The resulting surface recombination velocity on Si(100) is less than 1 cm/s, which is better than that obtained in concentrated HF. A surface recombination velocity of 20 cm/s using bromine is achieved. A simple model for these phenomena of a surface coverage of Si-X, where X is a monovalently bonded halogen atom, is presented.
ISSN:0361-5235
1543-186X
DOI:10.1007/bf02671234