Bulk lifetime determination in high purity silicon by contactless laser technique

The result of bulk lifetime measurements in high purity silicon are presented. For this investigation we offer a new method and technique for determination of the bulk value of the excess carrier lifetime in high purity silicon. The effective value of the lifetime being measured in such a material d...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 1997-06, Vol.8 (3), p.213-216
Main Authors: Fedortsov, A B, Letenko, D G, Churkin, Y V, Tsentsiper, L M, Vedde, J
Format: Article
Language:English
Subjects:
Aluminum gallium arsenides
Beams (radiation)
Electronics
Lasers
Light-emitting diodes
Modulation
Purity
Silicon
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Summary:The result of bulk lifetime measurements in high purity silicon are presented. For this investigation we offer a new method and technique for determination of the bulk value of the excess carrier lifetime in high purity silicon. The effective value of the lifetime being measured in such a material depends on the dimensions of the ingot. In our method the sample to be investigated is illuminated by the modulated radiation of the AlGaAs light-emitting diode (LED), which generates the excess carriers, and by the probe beam of the He-Ne laser (λ^sub p^ = 3.39 μm), which becomes modulated when passing through the sample. The bulk lifetime is determined by the analysis of the dependence of the phase shift between these two modulations versus the distance r between the points on the sample surface illuminated by the sources.[PUBLICATION ABSTRACT]
ISSN:0957-4522
1573-482X
DOI:10.1023/A:1018558500090