Color-sensitive photodetector based on porous silicon superlattices

Color-sensitivity of Si photodiodes was achieved by integrating porous silicon (PS) Bragg reflectors and Fabry–Perot filters. The PS was formed in the p +-type part of the p +n junction which required illumination of the samples during anodization. The optimal illumination power density turned out t...

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Bibliographic Details
Published in:Thin solid films 1997-04, Vol.297 (1), p.241-244
Main Authors: Krüger, M, Marso, M, Berger, M.G, Thönissen, M, Billat, S, Loo, R, Reetz, W, Lüth, H, Hilbrich, S, Arens-Fischer, R, Grosse, P
Format: Article
Language:English
Subjects:
Colour
Photodetectors
Porous silicon
Superlattices
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Summary:Color-sensitivity of Si photodiodes was achieved by integrating porous silicon (PS) Bragg reflectors and Fabry–Perot filters. The PS was formed in the p +-type part of the p +n junction which required illumination of the samples during anodization. The optimal illumination power density turned out to be a compromise: high power densities are necessary to enable high anodization current densities, but this results in a degraded filter performance. The PS layers had no significant influence on the electrical characteristics of the photodiodes, but as expected they strongly modified the spectral response. The results are in good agreement with the reflectance spectra of the filters. © 1997 Elsevier Science S.A.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(96)09414-X