Conductive LaNiO3 Electrode Grown by Pulsed Laser Ablation on Si Substrate

Using the pulsed laser ablation (PLA) technique, conductive LaNiO3 thin films have been successfully grown on (001) Si substrates. The XRD θ-2θ scan patterns indicate a preferential (110) orientation, and the electron probe microanalyzer (EPMA) investigations show that the three elements La, Ni, and...

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Bibliographic Details
Published in:Journal of materials research 1997-04, Vol.12 (4), p.931-935
Main Authors: Sun, Li, Yu, Tao, Chen, Yan-Feng, Zhou, Jun, Ming, Nai-Ben
Format: Article
Language:English
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Summary:Using the pulsed laser ablation (PLA) technique, conductive LaNiO3 thin films have been successfully grown on (001) Si substrates. The XRD θ-2θ scan patterns indicate a preferential (110) orientation, and the electron probe microanalyzer (EPMA) investigations show that the three elements La, Ni, and O distribute uniformly in the films. The resistivity of the as-deposited LaNiO3 films display a metallic character. Polycrystalline PbTiO3films are deposited by metalorganic chemical vapor deposition (MOCVD) on these LaNiO3 electrodes. Ferroelectricity measurements of the PbTiO3/LaNiO3 heterostructure prove LaNiO3 to be a promising electrode material in the integration of ferroelectrics and Si wafer.
ISSN:0884-2914
2044-5326
DOI:10.1557/JMR.1997.0133