Bulk silicon micromachining using porous silicon sacrificial layers

A bulk silicon micromachining technique using porous silicon as a sacrificial layer is developed. The proposed process is fully C-MOS compatible and it was successfully used to fabricate deep cavities into silicon with very smooth bottom surfaces and sidewalls. Suspended flat polysilicon membranes w...

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Bibliographic Details
Published in:Microelectronic engineering 1997-02, Vol.35 (1-4), p.397-400
Main Authors: Kaltsas, G., Nassiopoulos, A.G.
Format: Article
Language:English
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Summary:A bulk silicon micromachining technique using porous silicon as a sacrificial layer is developed. The proposed process is fully C-MOS compatible and it was successfully used to fabricate deep cavities into silicon with very smooth bottom surfaces and sidewalls. Suspended flat polysilicon membranes were also produced of a surface as large as 230 × 550 μm2, as well as polysilicon cantilevers. This process opens important possibilities in silicon integrated sensor fabrication.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(96)00209-2