Investigation of depth distributions of defects in Si created by high energy Ti ions

Defect distributions in Si created by high energy MeV Ti ions were studied as a function of the irradiation angle and energy using Rutherford backscattering/channeling. A silicon crystal of 〈100〉 direction was irradiated at room temperature by 1.0–2.0 MeV Ti ions under tilted angles with a dose of 5...

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Bibliographic Details
Published in:Vacuum 1994, Vol.45 (9), p.955-958
Main Authors: Wang, Ke-Ming, Shi, Bo-Rong, Ma, Shi-Jie, Liu, Xiang-Dong, Zhai, Hong-Ying, Xu, Tian-Bing, Zhu, Pei-Ran, Zhao, Qing-Tai
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Ion radiation effects
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids
crystallography
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Summary:Defect distributions in Si created by high energy MeV Ti ions were studied as a function of the irradiation angle and energy using Rutherford backscattering/channeling. A silicon crystal of 〈100〉 direction was irradiated at room temperature by 1.0–2.0 MeV Ti ions under tilted angles with a dose of 5 × 10 14 ions cm −2. It is found that the damage peak produced by 1.0 MeV Ti + is higher than one produced by 2.0 MeV Ti + at the same dose. The defect distributions extracted from the present experiment are compared with TRIM '89 calculations. The results show that the shape and depth of the damage profile under tilted angle implantation are qualitatively describe by TRIM '89.
ISSN:0042-207X
1879-2715
DOI:10.1016/0042-207X(94)90219-4