Investigation of in situ process for GaAs/AlGaAs buried quantum wires

• Published in: Japanese Journal of Applied Physics 1994-12, Vol.33 (12B), p.7223-7227
• Main Authors: WAKAYA, F, UMEDA, K, YANAGISAWA, J, YUBA, Y, TAKAOKA, S, MURASE, K, GAMO, K
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Iii-v semiconductors; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.33.7223

To reveal the possibility of fabricating buried electron waveguides in GaAs/AlGaAs heterostructures, lateral confinement potentials formed by in situ low-energy Si focused ion beam implantation are numerically evaluated and the effect of growth interruption on two-dimensional electron gas (2DEG) formation is investigated. The confinement potentials and energy eigenvalues are calculated self-consistently as a function of undoped AlGaAs spacer layer thickness. It is confirmed that carrier depletion induced by growth interruption can be compensated by excess doping. An unusual dependence of the 2DEG density on the growth interruption position is observed. It may be caused by the interface states near the Fermi level at the growth-interrupted layer.