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In situ spectral reflectance monitoring of III-V epitaxy

Near-normal incidence spectral reflectance was used to monitor the growth of AlAs, GaAs, and AlGaAs films by metallorganic CVD in real time. The simultaneous acquisition of reflectance data over a wide spectral bandwidth allows compositional discrimination between layers and greater thickness sensit...

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Bibliographic Details
Published in:Journal of electronic materials 1994-02, Vol.23 (2), p.179-183
Main Authors: KILLEEN, K. P, BREILAND, W. G
Format: Article
Language:English
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Summary:Near-normal incidence spectral reflectance was used to monitor the growth of AlAs, GaAs, and AlGaAs films by metallorganic CVD in real time. The simultaneous acquisition of reflectance data over a wide spectral bandwidth allows compositional discrimination between layers and greater thickness sensitivity than single-wavelength measurements. The potential of this technique for application to device structures was demonstrated by monitoring the fabrication of AlAs/AlGaAs visible distributed Bragg reflectors.
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02655266