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In situ spectral reflectance monitoring of III-V epitaxy
Near-normal incidence spectral reflectance was used to monitor the growth of AlAs, GaAs, and AlGaAs films by metallorganic CVD in real time. The simultaneous acquisition of reflectance data over a wide spectral bandwidth allows compositional discrimination between layers and greater thickness sensit...
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Published in: | Journal of electronic materials 1994-02, Vol.23 (2), p.179-183 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Near-normal incidence spectral reflectance was used to monitor the growth of AlAs, GaAs, and AlGaAs films by metallorganic CVD in real time. The simultaneous acquisition of reflectance data over a wide spectral bandwidth allows compositional discrimination between layers and greater thickness sensitivity than single-wavelength measurements. The potential of this technique for application to device structures was demonstrated by monitoring the fabrication of AlAs/AlGaAs visible distributed Bragg reflectors. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/BF02655266 |