An analysis of Schottky barrier in silicene/Ga2SeS heterostructures by employing electric field and strain

Two-dimensional materials are leading the way in nanodevice applications thanks to their various advantages. Although two-dimensional materials show promise for many applications, they have certain limitations. In the last decade, the increasing demand for the applications of novel two-dimensional m...

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Bibliographic Details
Published in:Physical chemistry chemical physics : PCCP 2022-05, Vol.24 (17), p.10210-10221
Main Authors: Caglayan, R, Guler, H E, Mogulkoc, Y
Format: Article
Language:English
Subjects:
Charge transfer
Dipole moments
Electric fields
Heterostructures
Interlayers
Nanotechnology devices
Silicene
Two dimensional materials
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Summary:Two-dimensional materials are leading the way in nanodevice applications thanks to their various advantages. Although two-dimensional materials show promise for many applications, they have certain limitations. In the last decade, the increasing demand for the applications of novel two-dimensional materials has accelerated heterostructure studies in this field. Hence, restoring the combination of two-dimensional heterostructured materials has been reported. In this paper, we show that the effect of the external electric field and biaxial strain on the silicene/Ga2SeS heterostructure has a critical impact on the tuning of the Schottky barrier height. The findings such as the variation of the electronic band gap, interlayer charge transfer, total dipole moment, and n-type/p-type Schottky barrier transitions of the silicene/Ga2SeS heterostructure under external effects imply that the device performance can be adjusted with Janus 2D materials.
ISSN:1463-9076
1463-9084
DOI:10.1039/d2cp00228k