On the description of the collision terms in three-valley hydrodynamic models for GaAs device modeling

A reduced set of transport parameters is proposed for the collision terms of the three-valley hydrodynamic model which is a faster alternative to ensemble Monte Carlo simulations. The predictions of the proposed model have been found to be in excellent agreement with transient ensemble Monte Carlo d...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-08, Vol.41 (8), p.1471-1475
Main Authors: Besikci, C., Razeghi, M.
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Electrons
Equations
Exact sciences and technology
Gallium arsenide
Hydrodynamics
Monte Carlo methods
Particle scattering
Power engineering and energy
Predictive models
Quantum computing
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
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Summary:A reduced set of transport parameters is proposed for the collision terms of the three-valley hydrodynamic model which is a faster alternative to ensemble Monte Carlo simulations. The predictions of the proposed model have been found to be in excellent agreement with transient ensemble Monte Carlo data. The reduction in the number of the transport parameters makes the model relatively easy to implement with substantial accuracy. The transport parameters which are of interest in semiclassical device modeling are presented as a function of electron energy.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.297747