Pattern Geometry Effects in the Chemical‐Mechanical Polishing of Inlaid Copper Structures

An investigation into the pattern dependence of dishing and erosion during the chemical-mechanical polishing of Cu used for delineating inlaid metal patterns is described. Copper dishing is determined to be highly dependent on the width of the Cu structure, but only minimally dependent on the densit...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1994-10, Vol.141 (10), p.2842-2848
Main Authors: Steigerwald, J. M., Zirpoli, R., Murarka, S. P., Price, D., Gutmann, R. J.
Format: Article
Language:English
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Summary:An investigation into the pattern dependence of dishing and erosion during the chemical-mechanical polishing of Cu used for delineating inlaid metal patterns is described. Copper dishing is determined to be highly dependent on the width of the Cu structure, but only minimally dependent on the density of Cu structures. Erosion of the SiO sub 2 dielectric layer is strongly affected by the pattern density, but not affected by changes in the width of the Cu lines. As a result, both line width and pattern density are important considerations in predicting the final thickness of the Cu lines.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2059241