Formation of Al sub 3 Ti during physical vapour deposition of titanium on aluminium

In this study, the kinetics of Al sub 3 Ti formation during full sheet Ti/Al bilayer annealing has been investigated. Two characterisation methods have been developed. The first one was based on full sheet resistance measurements and the second one on Wavelength Dispersive X-Ray Fluorescence spectro...

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Bibliographic Details
Published in:Microelectronic engineering 1997-03, Vol.37-38, p.381-387
Main Authors: Ulmer, L, Pitard, F, Poncet, D, Demolliens, O
Format: Article
Language:English
Online Access:Get full text
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Summary:In this study, the kinetics of Al sub 3 Ti formation during full sheet Ti/Al bilayer annealing has been investigated. Two characterisation methods have been developed. The first one was based on full sheet resistance measurements and the second one on Wavelength Dispersive X-Ray Fluorescence spectroscopy. For both methods, a model of the thickness of the Al sub 3 Ti layer formed versus annealing time and temperature was obtained using a centred composite design of experiment. Then, the effect of a soft sputter etch on the Al surface before Ti deposition was investigated in order to be representative of classical via filling processing, and Al sub 3 Ti formation during Ti physical vapour deposition was obtained.
ISSN:0167-9317