Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers

The progress in long-wavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed. By the application of grown-in strain, the device performance is considerably improved such that conventional bulk and unstrained quantum-well active-layer devic...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1994-02, Vol.30 (2), p.477-499
Main Authors: Thiis, P.J.A., Tiemeijer, L.F., Binsma, J.J.M., Van Dongen, T.
Format: Article
Language:English
Subjects:
Capacitive sensors
Maintenance
Quantum well lasers
Quantum wells
Semiconductor lasers
Semiconductor optical amplifiers
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Summary:The progress in long-wavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed. By the application of grown-in strain, the device performance is considerably improved such that conventional bulk and unstrained quantum-well active-layer devices are outperformed, while a high reliability is maintained.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.283797