Si/Si sub(1-x)Ge sub(x) valence band discontinuity measurements using a semiconductor-insulator-semiconductor (SIS) heterostructure

We have measured the valence-band discontinuity of strained Si sub(1-x)Ge sub(x) on (100) unstrained Si using p-Si sub(1-x)Ge sub(x/) sub(Si)/p-Si sub(1-x)Ge sub(x) semiconductor-insulator semiconductor (SIS) structures with Ge compositions in the range 10 < x < 25%. The epitaxial heterostruct...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-01, Vol.41 (12), p.2430-2439
Main Authors: Gan, Chock H, del Alamo, Jesus A, Bennett, Brian R, Meyerson, Bernard S, Crabbe, Emmanuel F, Sodini, Charles G, Reif, L Rafael
Format: Article
Language:English
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Summary:We have measured the valence-band discontinuity of strained Si sub(1-x)Ge sub(x) on (100) unstrained Si using p-Si sub(1-x)Ge sub(x/) sub(Si)/p-Si sub(1-x)Ge sub(x) semiconductor-insulator semiconductor (SIS) structures with Ge compositions in the range 10 < x < 25%. The epitaxial heterostructures were grown by ultra-high-vacuum chemical-vapor-deposition. A new data analysis procedure is proposed for extracting small Delta E sub(v) values out of the current-voltage characteristics of the SIS heterostructures as a function of temperature. Our data indicates that the valence band discontinuity between Si and Si sub(1-x)Ge sub(x) can be approximated by Delta E sub(v) identical with 6.4x meV for 0 < x < 17.5%.
ISSN:0018-9383