Surface passivation of In sub(0.52)Al sub(0.48)As using (NH sub(4)) sub(2)S sub(x) and P sub(2)S sub(5)/(NH sub(4)) sub(2)S

(NH sub(4)) sub(2)S sub(x) and P sub(2)S sub(5)/(NH sub(4)) sub(2)S treatments were applied on In sub(0.52)Al sub(0.48)As surfaces. From X-ray photoelectron spectroscopy measurements, residual sulful atoms on the surface were found to form In-S, Al-S, and As-S bonds. The performance of Schottky diod...

Full description

Saved in:
Bibliographic Details
Published in:JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP 1994-01, Vol.33 (3A), p.1248-1252
Main Authors: Yoshida, Nobuhide, Totsuka, Masahiro, Ino, Junsuke, Matsumoto, Satoru
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:(NH sub(4)) sub(2)S sub(x) and P sub(2)S sub(5)/(NH sub(4)) sub(2)S treatments were applied on In sub(0.52)Al sub(0.48)As surfaces. From X-ray photoelectron spectroscopy measurements, residual sulful atoms on the surface were found to form In-S, Al-S, and As-S bonds. The performance of Schottky diodes was improved by (NH sub(4)) sub(2)S sub(x) and P sub(2)S sub(5)/(NH sub(4)) sub(2)S treatments in terms of the reverse leakage current and barrier height. In addition, the advantage of using P sub(2)S sub(5)/(NH sub(4)) sub(2)S was revealed compared with (NH sub(4)) sub(2)S sub(x).
ISSN:0021-4922