Surface passivation of In sub(0.52)Al sub(0.48)As using (NH sub(4)) sub(2)S sub(x) and P sub(2)S sub(5)/(NH sub(4)) sub(2)S

(NH sub(4)) sub(2)S sub(x) and P sub(2)S sub(5)/(NH sub(4)) sub(2)S treatments were applied on In sub(0.52)Al sub(0.48)As surfaces. From X-ray photoelectron spectroscopy measurements, residual sulful atoms on the surface were found to form In-S, Al-S, and As-S bonds. The performance of Schottky diod...

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Published in:JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP 1994-01, Vol.33 (3A), p.1248-1252
Main Authors: Yoshida, Nobuhide, Totsuka, Masahiro, Ino, Junsuke, Matsumoto, Satoru
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container_issue 3A
container_start_page 1248
container_title JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP
container_volume 33
creator Yoshida, Nobuhide
Totsuka, Masahiro
Ino, Junsuke
Matsumoto, Satoru
description (NH sub(4)) sub(2)S sub(x) and P sub(2)S sub(5)/(NH sub(4)) sub(2)S treatments were applied on In sub(0.52)Al sub(0.48)As surfaces. From X-ray photoelectron spectroscopy measurements, residual sulful atoms on the surface were found to form In-S, Al-S, and As-S bonds. The performance of Schottky diodes was improved by (NH sub(4)) sub(2)S sub(x) and P sub(2)S sub(5)/(NH sub(4)) sub(2)S treatments in terms of the reverse leakage current and barrier height. In addition, the advantage of using P sub(2)S sub(5)/(NH sub(4)) sub(2)S was revealed compared with (NH sub(4)) sub(2)S sub(x).
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title Surface passivation of In sub(0.52)Al sub(0.48)As using (NH sub(4)) sub(2)S sub(x) and P sub(2)S sub(5)/(NH sub(4)) sub(2)S
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