Barrier integrity testing of Ta using triangular voltage sweep and a novel CV-BTS test structure

Numerous techniques are available for evaluating the efficacy of barrier materials at preventing the diffusion of copper into dielectric materials. In this study, the capability of triangular voltage sweep (TVS) as a means of determining barrier integrity is investigated. Also in the study, a new te...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2002-10, Vol.64 (1), p.255-260
Main Authors: Book, G.W, Pfeifer, K, Smith, S
Format: Article
Language:English
Subjects:
Applied sciences
Barrier integrity
CV-BTS
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
TVS
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Numerous techniques are available for evaluating the efficacy of barrier materials at preventing the diffusion of copper into dielectric materials. In this study, the capability of triangular voltage sweep (TVS) as a means of determining barrier integrity is investigated. Also in the study, a new test structure is introduced for performing capacitance voltage bias temperature stress (CV-BTS) tests. This test structure, which is designed to mimic barrier performance at the bottom of vias where step coverage is a challenge, was used to determine the diffusion barrier properties of PVD deposited tantalum as a function of Ta thickness in 0.25-μm vias.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00797-9