Loading…
CrO2-based heterostructure and magnetic tunnel junction: perfect spin filtering effect, spin diode effect and high tunnel magnetoresistance
Half-metallic ferromagnetic CrO 2 has attracted much interest due to its 100% spin polarization and high Curie temperature. CrO 2 films have been fabricated on a TiO 2 (100) substrate. However, there have been no reports on the spin transport properties of devices based on a CrO 2 electrode and TiO...
Saved in:
Published in: | RSC advances 2019-01, Vol.9 (7), p.355-3557 |
---|---|
Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Half-metallic ferromagnetic CrO
2
has attracted much interest due to its 100% spin polarization and high Curie temperature. CrO
2
films have been fabricated on a TiO
2
(100) substrate. However, there have been no reports on the spin transport properties of devices based on a CrO
2
electrode and TiO
2
barrier. In this work, we use first-principles calculations combined with a nonequilibrium Green's function method to investigate the bias-voltage-dependent spin transport properties for the CrO
2
/TiO
2
(100) heterostructure and the CrO
2
/TiO
2
/CrO
2
(100) magnetic tunnel junction (MTJ). Our results reveal the excellent spin filtering effect and spin diode effect in the heterostructure as well as the high tunnel magnetoresistance ratio (up to 4.48 Ă— 10
14
%) in the MTJ, which indicate potential spintronic applications. The origins of these perfect spin transport characteristics are discussed in terms of the calculated spin-dependent electrode band structures, the spin-dependent transmission spectra and semiconductor theory.
Spin-dependent device density of states in the CrO
2
/TiO
2
/CrO
2
magnetic tunnel junction. |
---|---|
ISSN: | 2046-2069 |
DOI: | 10.1039/c8ra08107g |