WAFER-BONDED AlGaInP/Au/AuBe/SiO2/Si LIGHT-EMITTING DIODES

An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been fabricated by the wafer bonding technique. The mirror-substrate LED is capable of emitting luminous intensity of 90 mcd under 20 mA injection. It is superior to the conventional absorbed-substrate LED with a distr...

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Published in:Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 4B, pp. 2357-2359. 2000 Part 1. Vol. 39, no. 4B, pp. 2357-2359. 2000, 2000, Vol.39 (4B), p.2357-2359
Main Authors: Horng, R-H, Wuu, D-S, Wei, S-C, Tseng, C-Y, Huang, M-F, Chang, K-H
Format: Article
Language:English
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Summary:An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been fabricated by the wafer bonding technique. The mirror-substrate LED is capable of emitting luminous intensity of 90 mcd under 20 mA injection. It is superior to the conventional absorbed-substrate LED with a distributed Bragg reflector structure (=1 mcd). This device exhibits normal p-n diode behavior with a forward voltage of < 2 V operating at 20 mA. The leakage current is about 3 nA under a 36 V reverse bias. This result indicates that the wafer bonding technique does not adversely affect the I-V characteristic of the LED device. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and the Si substrate providing a good heat sink solve the joule heating problem inherent in conventional LEDs. 7 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.39.2357