Photoluminescence spectra of SIMOX buried oxide layers prepared under various conditions

The intensity of photoluminescence (PL) peaks at 4.1 eV (300 nm) and 3.1 eV (400 nm) for the buried oxide (BOX) layer of SIMOX structures is less for triple-implant than for single implant samples and is further reduced in single-implant sample by supplemental oxygen implantation. Heat treatment of...

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Published in:Microelectronic engineering 1999, Vol.48 (1), p.335-338
Main Authors: Rebohle, L., Revesz, A.G., Skorupa, W., Hughes, H.L.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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description The intensity of photoluminescence (PL) peaks at 4.1 eV (300 nm) and 3.1 eV (400 nm) for the buried oxide (BOX) layer of SIMOX structures is less for triple-implant than for single implant samples and is further reduced in single-implant sample by supplemental oxygen implantation. Heat treatment of samples from which the top Si layer was removed decreases the PL intensity in the ultraviolet (UV) region even further. The behavior of the PL is mainly attributed to oxygen deficiency centers in the surface region of a-Si nanoclusters in the BOX layer.
doi_str_mv 10.1016/S0167-9317(99)00399-8
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subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Photoluminescence spectra of SIMOX buried oxide layers prepared under various conditions
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