New techniques in SIMS analysis of HgCdTe materials

This paper presents two new approaches used in the secondary ion mass spectrometry (SIMS) for high sensitivity dopant and impurity analysis in HgCdTe materials, namely, the high mass resolution with dynamic transfer and the MCs super(+) technique. It is shown that better detection limits for As and...

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Bibliographic Details
Published in:Journal of electronic materials 1999-06, Vol.28 (6), p.793-798
Main Authors: Wang, Larry, Zhang, Lily H, Li, Jun
Format: Article
Language:English
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Summary:This paper presents two new approaches used in the secondary ion mass spectrometry (SIMS) for high sensitivity dopant and impurity analysis in HgCdTe materials, namely, the high mass resolution with dynamic transfer and the MCs super(+) technique. It is shown that better detection limits for As and Cu can be obtained at a level of 2-5e14 at/cm super(3). The MCs super(+) technique has added advantages of better measurement precision, monitoring Cd composition in the same profile, and small device area analysis capability. Advantages and trade-offs of each technique are discussed and compared. An updated detection limit table for all elements measured in HgCdTe materials using SIMS is also presented.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-999-0072-4