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Wide band gap fluoride dielectric crystals doped with trivalent rare earth ions as optical materials for 157 nm photolithography

We investigate the possibility to use a new class of wide band gap fluoride dielectric crystals as optical elements for 157 nm photolithography. The rare earth doped or non-doped crystals can be used as passive or active optical elements in the VUV. Applications are depending on the structure of the...

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Bibliographic Details
Published in:Microelectronic engineering 2000-06, Vol.53 (1), p.105-108
Main Authors: Sarantopoulou, E., Kollia, Z., Cefalas, A.C.
Format: Article
Language:English
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Summary:We investigate the possibility to use a new class of wide band gap fluoride dielectric crystals as optical elements for 157 nm photolithography. The rare earth doped or non-doped crystals can be used as passive or active optical elements in the VUV. Applications are depending on the structure of the levels of the 4f n−15d electronic configuration and the strength of the interconfigurational 4f n → 4f n−15d transitions of the trivalent rare earth ions in the dielectric fluoride host. The laser induced fluorescence and the absorption spectra of the pure LiCaAlF 6 crystal and the doped with Nd 3+ and Er 3+ ions were studied in the VUV region of the spectrum.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(00)00274-4