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Wide band gap fluoride dielectric crystals doped with trivalent rare earth ions as optical materials for 157 nm photolithography
We investigate the possibility to use a new class of wide band gap fluoride dielectric crystals as optical elements for 157 nm photolithography. The rare earth doped or non-doped crystals can be used as passive or active optical elements in the VUV. Applications are depending on the structure of the...
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Published in: | Microelectronic engineering 2000-06, Vol.53 (1), p.105-108 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We investigate the possibility to use a new class of wide band gap fluoride dielectric crystals as optical elements for 157 nm photolithography. The rare earth doped or non-doped crystals can be used as passive or active optical elements in the VUV. Applications are depending on the structure of the levels of the 4f
n−15d electronic configuration and the strength of the interconfigurational 4f
n → 4f
n−15d transitions of the trivalent rare earth ions in the dielectric fluoride host. The laser induced fluorescence and the absorption spectra of the pure LiCaAlF
6 crystal and the doped with Nd
3+ and Er
3+ ions were studied in the VUV region of the spectrum. |
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ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/S0167-9317(00)00274-4 |