Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides

Time-to-breakdown (tbd) of polysilicon/polyoxide/polysilicon structures is investigated on small and large area capacitors. The ln(tbd) versus 1/Eox projection lines are corrected by using an average oxide field enhancement factor for the interface polysilicon/thermally grown polyoxide. A field acce...

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Published in:Microelectronics 2000-08, Vol.31 (8), p.663-666
Main Authors: Gueorguiev, V.K, Ivanov, Tz.E, Dimitriadis, C.A, Andreev, S.K, Popova, L.I
Format: Article
Language:English
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Reliability
Silicon dioxide–polysilicon interface
Thin films
Time-to-breakdown
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description Time-to-breakdown (tbd) of polysilicon/polyoxide/polysilicon structures is investigated on small and large area capacitors. The ln(tbd) versus 1/Eox projection lines are corrected by using an average oxide field enhancement factor for the interface polysilicon/thermally grown polyoxide. A field acceleration factor G≈320MV/cm in the time-to-breakdown projection line is obtained. It is shown that the fast prediction of time-to-breakdown can be achieved with short stress time measurements in structures of different area.
doi_str_mv 10.1016/S0026-2692(00)00043-4
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subjects Reliability
Silicon dioxide–polysilicon interface
Thin films
Time-to-breakdown
title Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides
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