A 2.4-GHz-band 1.8-V operation single-chip Si-CMOS T/R-MMIC front-end with a low insertion loss switch

This paper describes the design and experimental results of a 1.8-V single-chip CMOS MMIC front-end for 2.4-GHz band short-range wireless communications, such as Bluetooth and wireless LANs. The IC consists of fundamental RF building circuits-a power amplifier (PA), a low-noise amplifier (LNA), and...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2001-08, Vol.36 (8), p.1186-1197
Main Authors: Yamamoto, K., Heima, T., Furukawa, A., Ono, M., Hashizume, Y., Komurasaki, H., Maeda, S., Sato, H., Kato, N.
Format: Article
Language:English
Subjects:
Capacitors
Circuits
CMOS
CMOS integrated circuits
CMOS technology
Electronics industry
Gain
Insertion loss
Integrated circuits
Low-noise amplifiers
MMICs
Radio frequencies
Radio frequency
Radiofrequency integrated circuits
Switches
Wireless communication
Wireless communications
Wireless networks
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Summary:This paper describes the design and experimental results of a 1.8-V single-chip CMOS MMIC front-end for 2.4-GHz band short-range wireless communications, such as Bluetooth and wireless LANs. The IC consists of fundamental RF building circuits-a power amplifier (PA), a low-noise amplifier (LNA), and a transmit/receive-antenna switch (SW), including almost all on-chip matching elements. The IC was fabricated using a 0.18-/spl mu/m standard bulk CMOS technology which has no extra processing steps to enhance the RF performances. Two new circuit-design techniques are introduced in the IC in order to minimize the insertion loss of the SW and realize a higher gain for the PA and LNA despite the utilization of the standard bulk CMOS technology. The first is the derivation of an optimum gate width of the SW to minimize the insertion loss based on small-signal equivalent circuit analysis. The other is the revelation of the advantages of interdigitated capacitors (IDCs) over conventional polysilicon to polysilicon capacitors and the successful use of the IDCs in the LNA and PA. The IC achieves the following sufficient characteristics for practical wireless terminals at 2.1 GHz and 1.8 V: a 5-dBm transmit power at a -1-dB gain compression, a 19-dB gain, an 18-mA current for the PA, a 1.5-dB insertion loss, more than 24-dB isolation, an 11-dBm power handling capability for the SW, a 7.5-dB gain, a 4.5-dB noise figure, and an 8-mA current for the LNA.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.938369