Micromachining of pure silicon by molecular dynamics

• Published in: Thin solid films 1998-12, Vol.334 (1-2), p.221-224
• Main Authors: Nozaki, Tadatoshi, Doyama, Masao, Kogure, Yoshiaki, Yokotsuka, Tatsuo
• Format: Article
• Language: English
• Subjects: Computer simulation; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Mechanical and acoustical properties of condensed matter; Mechanical properties of solids; Micro-tribology; Molecular dynamics; Physics; Silicon; Surface treatments; Tribology and hardness
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(98)01148-1

The cutting of nanometer parts has been simulated using molecular dynamics. In this paper single crystals of silicon were cut by idealized tools. The results are compared with those of metals. Pure single crystals of silicon having faces of (111), (1̄1̄1̄), (11̄0), (1̄10), (1̄1̄2), and (112̄) were cut by a sharp edge. The potential used here was a three-body Stillinger–Weber potential. The depth of the edge was chosen to be one, two and three (111) atomic layers. Single crystals of silicon were found to be harder than those of metals. The plastic deformation in silicon was more restricted in a limited area than in metals. The surface was smoother when the cutting thickness was thicker. Atomic shuffling was not observed. The creation of dislocations depends on the cutting speed. The chip was always found to be amorphous.