Magnetoluminescence measurements of two-dimensional hole gas

The radiative recombination in the p-type Al 0.5Ga 0.5As/GaAs heterostructure interface, so called H-band, was investigated using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy. The enhancement of the H-band intensity with excitation at the free exciton energy was observe...

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Bibliographic Details
Published in:Thin solid films 1998-12, Vol.336 (1), p.366-369
Main Authors: Ciorga, M, Bryja, L, Misiewicz, J, Hansen, O.P
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Diamagnetic shift
Exact sciences and technology
H-band, Al xGa 1-xAs/GaAs heterointerface
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Photoluminescence
Photoluminescence excitation
Physics
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Summary:The radiative recombination in the p-type Al 0.5Ga 0.5As/GaAs heterostructure interface, so called H-band, was investigated using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy. The enhancement of the H-band intensity with excitation at the free exciton energy was observed. Magnetoluminescence measurements, both in Faraday and Voigt configurations, were also performed. Non-excitonic behaviour of investigated line in fields B>3 T and excitonic in lower fields was observed.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(98)01307-8