Impact of E-E scattering to the hot carrier degradation of deep submicron NMOSFETs

The hot carrier degradation of short channel NMOSFETs (L/sub EFF/=0.07-0.10 μm) stressed at 2.0 V/spl les/V/sub DS//spl les/2.9 V and a wide V/sub GS/ range is shown NOT to obey the classic hot carrier "lucky electron model". In the low and mid V/sub GS/ range, the degradation behavior is...

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Bibliographic Details
Published in:IEEE electron device letters 1998-12, Vol.19 (12), p.463-465
Main Authors: Rauch, S.E., Guarin, F.J., LaRosa, G.
Format: Article
Language:English
Subjects:
Degradation
Electrons
Hot carriers
MOS devices
MOSFET circuits
Predictive models
Scattering
Stress
Temperature
Voltage
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Summary:The hot carrier degradation of short channel NMOSFETs (L/sub EFF/=0.07-0.10 μm) stressed at 2.0 V/spl les/V/sub DS//spl les/2.9 V and a wide V/sub GS/ range is shown NOT to obey the classic hot carrier "lucky electron model". In the low and mid V/sub GS/ range, the degradation behavior is better described by an effective electron temperatures model proposed here, which takes e-e scattering effects into account. In the high V/sub GS/ regime, a further lifetime reduction can be qualitatively explained within this model by the increase in electron concentration at the Si-SiO 2 interface near the drain region.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.735747