Calculation of minimum noise figure using the simple Fukui equation for gallium nitride (GaN) HEMTs

The aim of the paper is to present a simple noise model using the Delegedeudeauf formulation for the Fukui constant K F, in order to estimate the minimum noise figure of Gallium nitride (GaN) based MESFET/HEMT devices. The Fukui model is compared with published experimental results of a 0.15 μm gate...

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Bibliographic Details
Published in:Solid-state electronics 2001-05, Vol.45 (5), p.677-682
Main Author: Oxley, C.H
Format: Article
Language:English
Subjects:
Fukui
Gallium nitride (GaN) HEMT
Noise figure
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Summary:The aim of the paper is to present a simple noise model using the Delegedeudeauf formulation for the Fukui constant K F, in order to estimate the minimum noise figure of Gallium nitride (GaN) based MESFET/HEMT devices. The Fukui model is compared with published experimental results of a 0.15 μm gate-length GaN HEMT and shows good agreement with the measured minimum noise figure between 5 and 26 GHz. The work indicates that with an improved F t , which is dependent on material quality, very low noise figures of 0.4 dB at 12 GHz may be feasible from a GaN HEMT.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(01)00069-7